会议信息
ISPSD 2024: International Symposium on Power Semiconductor Devices and ICs
https://www.ispsd2024.com/
截稿日期:
2023-12-04
通知日期:
2024-02-05
会议日期:
2024-06-02
会议地点:
Bremen, Germany
届数:
36
浏览: 1867   关注: 0   参加: 0

征稿
Topics of Interest include but are not limited to

    Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe-Operating Area, Reliability, ESD
    Materials: Si, SiC, GaN, AlN, Ga2O3, Diamond, GaAs
    Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs. Hybrid
    Processes: Process Integration, Lifetime Control, Passivation, Crystal Growth, III-V (Hetero)-Epitaxial Growth
    Modelling/Simulation: Device and Circuit Simulation, Layout, Verification Tools,
    Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management
    Applications: Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility

Conference Tracks

    High Voltage Power Devices (HV): High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes
    Low Voltage Power Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200 V) and power devices for power ICs of all voltage ranges
    Power IC Design (ICD): Circuit design and demonstration using power IC technology platform
    GaN and III/V Compound Materials (GaN): GaN and other III/V compound material (e.g. AlN, GaAs) based power devices, technology and integration, materials, and processing
    SiC and Other Materials (SiC): SiC and other material (e.g. Ga2O3, diamond) based power devices, technology and integration, materials, and processing
    Module and Package Technologies (PK): Package technology for modules, discrete power devices and power ICs
最后更新 Dou Sun 在 2023-12-03
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