Journal Information
Microelectronics Reliability
http://www.journals.elsevier.com/microelectronics-reliability/
Impact Factor:
1.371
Publisher:
ELSEVIER
ISSN:
0026-2714
Viewed:
2929
Tracked:
1

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Call For Papers
Microelectronics Reliability is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems. The coverage of the journal includes the following topics: physics and analysis; evaluation and prediction; modelling and simulation; methodologies and assurance. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, packaging and testing, will also be welcome, and practical papers reporting case studies in the field are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
Additional regular features will include:
• Special issues devoted to significant international conferences, or to important developing topics
• Letters to the Editors
• Industrial news and updates
• Calendar of forthcoming events
• Book reviews

Microelectronics Reliability is an indispensable forum for the exchange of knowledge and experience between microelectronics reliability professionals from both academic and industrial environments, and all those associated in any way with a steadily growing microelectronics industry and its many fields of application.
Last updated by Dou Sun in 2017-08-05
Special Issues
Special Issue on Wide Bandgap Materials and Devices
Submission Date: 2017-10-31

Wide bandgap semiconductors like GaN, SiC and oxides have become serious alternatives for the replacement of Si in power electronics and sensors devices especially in harsh environment. The aim of this special issue is to publish recent progress and results on fabrication, design, and reliability of wide bandgap materials and devices. Potential topics include, but are not limited to: - SiC homoepitaxy on low-offcut substrates - III-N on Si: nucleation layer, interface control - Thermal issues in GaN and oxide related devices - Integrating graphene with nitrides or SiC - Wide bandgap materials for photonic, power, or sensor applications - Reliability issues in devices based on wide bandgap materials - Recent development in nanostructures with new optoelectronics properties
Last updated by Dou Sun in 2017-08-05
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